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| HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C (MOSFET chip capability) External lead (current limit) TC = 25C, Note 1 TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS TJ 150C, RG = 2 W TC = 25C IXFK 180N10 IXFX 180N10 VDSS ID25 RDS(on) = 100 V = 180 A = 8 mW trr 250 ns Maximum Ratings 100 100 20 30 180 76 720 180 60 3 5 560 -55 ... +150 150 -55 ... +150 300 0.9/6 V V V V A A A A mJ J V/ns W C C C C Nm/lb.in. 6 10 g g PLUS 247TM (IXFX) G D (TAB) D TO-264 AA (IXFK) G D S (TAB) G = Gate S = Source D = Drain TAB = Drain Features * International standard packages * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance - easy to drive and to protect * Fast intrinsic rectifier Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 100 2.0 V 4.0 V 100 nA TJ = 25C TJ = 125C 100 mA 2 mA 8 mW VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 Note 1 Applications * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * AC motor control * Temperature and lighting controls Advantages * PLUS 247TM package for clip or spring mounting * Space savings * High power density 98552B (7/99) IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved 1-4 IXFK 180N10 IXFX 180N10 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 2 60 90 9100 VGS = 0 V, VDS = 25 V, f = 1 MHz 3200 1660 50 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 W (External), 90 140 65 360 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 65 190 0.22 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 PLUS247TM (IXFX) Outline gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 60A Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = 100A, VGS = 0 V, Note 1 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 180 720 1.5 250 A A V ns mC A TO-264 AA (IXFK) Outline IF = 50A,-di/dt = 100 A/ms, VR = 50 V 1.1 13 Note: 1. Pulse width limited by TJM 2. Pulse test, t 300 ms, duty cycle d 2 % Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFK 180N10 IXFX 180N10 Figure 1. Output Characteristics at 25OC 200 TJ=25OC VGS=10V 9V 8V 7V Figure 2. Output Characteristics at 125OC 200 TJ=125OC VGS=10V 9V 8V 7V 6V 150 150 6V ID - Amperes ID - Amperes 100 5V 100 5V 50 50 0 0 0.5 1.0 1.5 2.0 0.0 0 1 2 3 4 5 VDS - Volts VDS - Volts Figure 3. RDS(on) normalized to 15A/25OC vs. ID 1.8 VGS = 10V Figure 4. RDS(on) normalized to 15A/25OC vs. TJ 2.0 RDS(ON) - Normalized RDS(ON) - Normalized 1.6 1.4 1.2 TJ = 125 C O 1.8 1.6 1.4 1.2 1.0 0.8 25 ID=180A VGS=10V VGS=15V TJ = 25OC 1.0 0.8 ID=90A VGS=10V VGS=15V 0 50 100 150 200 50 75 100 125 150 ID - Amperes TJ - Degrees C Figure 5. Drain Current vs. Case Temperature 100 Figure 6. Admittance Curves 100 80 75 ID - Amperes Lead Current Limit 50 ID - Amperes 60 40 20 0 TJ = 125oC 25 TJ = 25oC 0 -50 -25 0 25 50 75 100 125 150 2 4 6 8 TC - Degrees C IXF 180N10 P1 VGS - Volts (c) 2000 IXYS All rights reserved 3-4 IXFK 180N10 IXFX 180N10 Figure 7. Gate Charge 15 12 VDS=50V ID=90A IG=10mA Figure 8. Capacitance Curves 10000 Ciss 9 6 3 0 0 50 100 150 200 250 300 350 400 Capacitance - pF F = 100kHz Coss VGS - Volts Crss 1000 0 5 10 15 20 25 30 35 40 Gate Charge - nC VDS - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode 200 175 VGS= 0V Figure 10. Forward Bias Safe Operating Area 200 100 1 ms 150 ID - Amperes ID - Amperes 125 100 TJ=125OC 10 ms 10 TC = 25OC DC 75 TJ=25OC 50 25 0 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 VSD - Volts VDS - Volts Figure 11. Transient Thermal Resistance 0.40 0.20 R(th)JC - K/W 0.10 0.08 0.06 0.04 0.02 0.01 10-3 3 R i: 0.02 0.046 0.154 ti: R(th)JC = 10-2 10-1 100 i=1 SRi{1-exp(-t/ti)} 101 0.007 0.01 0.25 Pulse Width - Seconds (c) 2000 IXYS All rights reserved 4-4 |
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